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N-type Mono Wafer
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Material properties
|
Item |
Specification |
Inspection method |
|
Growth method |
CZ |
|
|
Crystallinity |
Monocrystalline |
Preferential Etch Techniques (ASTM F47-88) |
|
Conductivity type |
N type |
P/N type tester (DLY-2 P/N ) |
|
Dopant |
Phosphorus |
-- |
|
Wafer model |
M10/G12 |
Wafer inspection system |
|
Thickness |
130±10µm |
Wafer inspection system |
Electrical properties
|
Item |
Specification |
Inspection method |
|
Resistivity |
0.4-1.6Ω.cm |
Wafer inspection system |
|
Minority carrier lifetime |
≥800μs |
QSSPC/Transient with injection level:1E15cm-3 (Sinton BCT-400) |
|
Oxygen concentration |
≤ 6E+17at/cm3 |
FTIR (ASTM F121-83) |
|
Carbon Concentration |
≤ 5E+16at/cm3 |
FTIR (GB/T 1558-2009) |
SAUNDERS
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24-hour service hotline
0519-85100886
Whatsapp： +86 15221097576
Email: licq@fyoda.com
Address: Room 12A, Liandong U Valley, No. 67, Chunjiang South Road, Zhonglou District, Changzhou City, Jiangsu Province
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